MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC307/D
Amplifier Transistors
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC307
BC307B
BC307C
BC308C
1
2
3
CASE 29鈥?4, STYLE 17
TO鈥?2 (TO鈥?26AA)
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC307, B, C
鈥?5
鈥?0
鈥?.0
鈥?00
350
2.8
1.0
8.0
鈥?55 to +150
BC308C
鈥?5
鈥?0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
357
125
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 鈥?.0 mAdc, IB = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 鈥?00
m
Adc, IC = 0)
Collector鈥揈mitter Leakage Current
(VCES = 鈥?0 V, VBE = 0)
(VCES = 鈥?0 V, VBE = 0)
(VCES = 鈥?0 V, VBE = 0) TA = 125擄C
(VCES = 鈥?0 V, VBE = 0) TA = 125擄C
BC307,B,C
BC308C
BC307,B,C
BC308C
BC307,B,C
BC308C
BC307,B,C
BC308C
V(BR)CEO
V(BR)EBO
ICES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?.2
鈥?.2
鈥?.2
鈥?.2
鈥?5
鈥?5
鈥?.0
鈥?.0
nAdc
碌A(chǔ)
鈥?5
鈥?5
鈥?.0
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
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