Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
PNP EXPITAXIAL PLANAR SILICON TRANSISTORS
BC303, BC304
TO-39
Metal Can Package
PNP SILICON LOW-AND MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25潞C unless specified otherwise)
DESCRIPTION
SYMBOL
V
CEO
Collector Emitter Voltage
V
CBO
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ Ta=25潞C
Junction Temperature
StorageTemperature Range
V
EBO
I
C
P
D
T
j
T
stg
BC303
60
85
7.0
500
850
175
-65 to +200
BC304
45
60
7.0
UNITS
V
V
V
mA
mW
潞C
潞C
ELECTRICAL CHARACTERISTICS (Ta=25潞 C unless specified otherwise)
BC303
MAX
DESCRIPTION
SYMBOL TEST CONDITION
MIN
V
CB
=85V, I
E
=0
I
CBO
Collector Cut off Current
20
V
CB
=60V, I
E
=0
DC Current Gain
h
FE
BC303 / BC304
I
C
=150mA,V
CE
=10V
BC303 / 304-5
I
C
=150mA,V
CE
=10V
BC303 / 304-6
I
C
=150mA,V
CE
=10V
I
C
=150mA,I
B
=15mA
40
70
120
ALL
240
140
240
0.65
BC304
MAX
MIN
20
UNITS
nA
nA
Collector Emitter Sat. Voltage
V
CE(Sat)
V
DYNAMICS CHARACTERISTICS
Transition Frequency
f
T
I
C
=50mA, V
CE
=10V
f=100MHz
ALL
0.65
MHz
Continental Device India Limited
Data Sheet
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