Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ T
A
= 25擄C
Derate above 25擄C
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CES
V
EBO
I
C
P
D
P
D
T
J
, T
stg
BC237
45
50
6.0
BC238
25
30
5.0
100
350
2.8
1.0
8.0
鈥?5 to +150
BC239
25
30
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
BC237,A,B,C
BC238B,C
BC239,C
1
2
3
CASE 29鈥?4, STYLE 17
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
357
125
Unit
擄C/W
擄C/W
2
BASE
3
EMITTER
COLLECTOR
1
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 2.0 mA, I
B
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 100
mA,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 30 V, V
BE
= 0)
BC237
BC238
BC239
BC237
BC238
BC239
BC238
BC239
BC237
BC238
BC239
BC237
V
(BR)CEO
45
25
25
6.0
5.0
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.2
0.2
0.2
0.2
0.2
0.2
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
15
15
15
4.0
4.0
4.0
碌A(chǔ)
V
V
(BR)EBO
V
I
CES
nA
(V
CE
= 50 V, V
BE
= 0)
(V
CE
= 30 V, V
BE
= 0) T
A
= 125擄C
(V
CE
= 50 V, V
BE
= 0) T
A
= 125擄C
漏
Semiconductor Components Industries, LLC, 2001
1
February, 2001 鈥?Rev. 2
Publication Order Number:
BC237/D
BC237/D相關(guān)型號(hào)PDF文件下載
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