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BC214LB Datasheet

  • BC214LB

  • PNP General Purpose Amplifier

  • 4頁(yè)

  • FAIRCHILD

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BC214LB
BC214LB
PNP General Purpose Amplifier
鈥?This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
鈥?Sourced from process 68.
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings*
T
a
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)-
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
-30
-45
-5.0
-500
- 55 ~ 150
Units
V
V
V
mA
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
NF
h
fe
C
OB
Parameter
Test Condition
I
C
= -2mA, I
B
= 0
I
C
= -10碌A(chǔ), I
E
= 0
I
E
= -10碌A(chǔ), I
C
= 0
V
CB
= -30V, I
E
= 0
V
EB
= -4V, I
C
= 0
V
CE
= -5V, I
C
= -2mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
f = 100MHz
V
CE
= -5V, I
C
= -200碌A(chǔ)
R
G
= 2k鈩? f = 15.7KHz
I
C
= -2mA, V
CE
= -5V
f = 1KHz
V
CB
= -10V, f = 1MHz
200
-0.6
200
2.0
400
10
pF
140
Min.
-30
-45
-5.0
-15
-15
400
-0.25
-0.6
-1.1
-0.72
V
V
V
MHz
dB
Max.
Units
V
V
V
nA
nA
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current gain Bandwidth Product
Noise Figure
Small Signal Current Gain
Output Capacitance
On Characteristics *
Small Signal Characteristics
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
漏2003 Fairchild Semiconductor Corporation
Rev. A, October 2003

BC214LB 產(chǎn)品屬性

  • 2,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • PNP

  • 500mA

  • 30V

  • 600mV @ 5mA,100mA

  • -

  • 140 @ 2mA,5V

  • 625mW

  • 200MHz

  • 通孔

  • TO-226-3、TO-92-3 標(biāo)準(zhǔn)主體

  • TO-92-3

  • 散裝

BC214LB相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 700MA I(C) | TO-18
    ETC
  • 英文版
    TRANZYSTORY
    ETC
  • 英文版
    TRANZYSTORY
    ETC [ETC]
  • 英文版
    Process 63 PNP Medium Power
    FAIRCHILD
  • 英文版
    Amplifier Transistors(PNP Silicon)
    ONSEMI
  • 英文版
    COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR
    MICRO-ELECTRONI...
  • 英文版
    Amlifier Transistors (PNP)
    MOTOROLA
  • 英文版
    Amplifier Transistors(PNP Silicon)
    ONSEMI [ON...
  • 英文版
    COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR
    MICRO-ELECTRONI...
  • 英文版
    Process 63 PNP Medium Power
    FAIRCHILD ...
  • 英文版
    Amlifier Transistors (PNP)
    MOTOROLA [...
  • 英文版
    Amlifier Transistors (PNP)
    MOTOROLA
  • 英文版
    Process 63 PNP Medium Power
    FAIRCHILD
  • 英文版
    Amplifier Transistors(PNP Silicon)
    ONSEMI
  • 英文版
    Amplifier Transistors(PNP Silicon)
    ONSEMI [ON...
  • 英文版
    Process 63 PNP Medium Power
    FAIRCHILD ...
  • 英文版
    Amlifier Transistors (PNP)
    MOTOROLA [...
  • 英文版
    Amlifier Transistors (PNP)
    MOTOROLA
  • 英文版
    Process 63 PNP Medium Power
    FAIRCHILD
  • 英文版
    Amplifier Transistors(PNP Silicon)
    ONSEMI

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