BC213L
BC213L
PNP General Purpose Amplifier
鈥?This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
鈥?Sourced from process 68.
鈥?See PN200 for Characteristics.
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings*
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)-
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
-30
-45
-5.0
-500
- 55 ~ 150
Units
V
V
V
mA
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
NF
h
fe
Parameter
Test Condition
I
C
= -2mA, I
B
= 0
I
C
= -10碌A(chǔ), I
E
= 0
I
E
= -10碌A(chǔ), I
C
= 0
V
CB
= -30V, I
E
= 0
V
EB
= -4.0V, I
C
= 0
V
CE
= -5V, I
C
= -10碌A(chǔ)
V
CE
= -5V, I
C
= -2.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -100mA, I
B
= -5.0mA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
f = 100MHz
V
CE
= -5.0V, I
C
= -200碌A(chǔ)
R
G
= 2.0k鈩? f = 1.0KHz
I
C
= -2.0mA, V
CE
= -5.0V
f = 1.0KHz
80
-0.6
200
10
40
80
Min.
-30
-45
-5.0
-15
-15
Max.
Units
V
V
V
nA
nA
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current gain Bandwidth Product
Noise Figure
Small Signal Current Gain
On Characteristics *
400
-0.25
-0.6
-1.1
-0.72
V
V
V
MHz
dB
Small Signal Characteristics
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
漏2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
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