BC212LB
BC212LB
PNP General Purpose Amplifier
鈥?This device is designed for general purpose amplifier application at
collector currents to 100mA.
鈥?Sourced from process 68.
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings*
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
50
60
5
100
- 55 ~ 150
Units
V
V
V
mA
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150擄C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
Parameter
I
C
= 2mA
I
C
= 10碌A
I
E
= 10碌A
V
CB
= 30V
V
EB
= 4V
V
CE
= 5V, I
C
= 10碌A
V
CE
= 5V, I
C
= 2mA
I
C
= 100mA, I
B
= 5mA
I
C
= 100mA, I
B
= 5mA
V
CE
= 5V, I
C
= 2mA
V
CE
= 10V, f = 1MHz
V
CE
= 5V, I
C
= 2mA, f = 1KHz
V
CE
= 5V, I
C
= 200碌A, f = 1KHz
R
G
= 2K鈩? BW = 200Hz
60
10
dB
0.6
40
60
0.6
1.4
0.72
6
V
V
V
pF
Test Condition
Min.
50
60
5
15
15
Typ.
Max.
Units
V
V
V
nA
nA
Off Characteristics
Collector-Emitter Breakdown Voltage
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
On Characteristics*
h
FE
DC Current Gain
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Small Signal Characteristics
C
ob
Output Capacitance
h
FE
NF
Small Signal Current Gain
Noise Figure
* Pulse Test: Pulse Width < 300碌s, Duty Cycle < 2.0%
漏2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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