BC212, BC212B, BC213
Amplifier Transistors
PNP Silicon
http://onsemi.com
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC212
BC213
Collector-Base Voltage
BC212
BC213
Emitter-Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation
@ TA = 25擄C
Derate above 25擄C
Total Device Dissipation
@ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
VEBO
IC
PD
350
2.8
PD
1.0
8.0
TJ, Tstg
鈥?5 to
+150
Watts
mW/擄C
擄C
mW
mW/擄C
1
2
3
TO鈥?2
CASE 29
STYLE 17
VCBO
鈥?0
鈥?5
鈥?.0
鈥?00
Vdc
mAdc
Symbol
VCEO
鈥?0
鈥?0
Vdc
Value
Unit
Vdc
2
BASE
3
EMITTER
COLLECTOR
1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
R
胃JA
R
胃JC
Max
357
125
Unit
擄C/W
擄C/W
MARKING DIAGRAMS
BC2
1xx
YWW
BC21xx
xx
Y
WW
= Specific Device Code
= 2, 2B, or 3
= Year
= Work Week
ORDERING INFORMATION
Device
BC212
BC212B
BC212BRL1
BC212BZL1
BC213
Package
TO鈥?2
TO鈥?2
TO鈥?2
TO鈥?2
TO鈥?2
Shipping
5000 Units/Box
5000 Units/Box
2000/Tape & Reel
2000/Ammo Pack
5000 Units/Box
漏
Semiconductor Components Industries, LLC, 2001
1
October, 2001 鈥?Rev. 2
Publication Order Number:
BC212/D