MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document
by BC212/D
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
BC212,B
BC213
BC214
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC
212
鈥?0
鈥?0
BC
213
鈥?0
鈥?5
鈥?.0
鈥?00
350
2.8
1.0
8.0
鈥?55 to +150
BC
214
鈥?0
鈥?5
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 17
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
357
125
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Collector 鈥?Emitter Breakdown Voltage
(IC = 鈥?.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 鈥?0
m
A, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 鈥?0
m
Adc, IC = 0)
Collector鈥揈mitter Leakage Current
(VCB = 鈥?0 V)
Emitter鈥揃ase Leakage Current
(VEB = 鈥?.0 V, IC = 0)
BC212
BC213
BC214
BC212
BC213
BC214
BC212
BC213
BC214
BC212
BC213
BC214
BC212
BC213
BC214
Symbol
V(BR)CEO
Min
鈥?0
鈥?0
鈥?0
鈥?0
鈥?5
鈥?5
鈥?
鈥?
鈥?
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Typ
鈥?/div>
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鈥?/div>
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鈥?/div>
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鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?5
鈥?5
鈥?5
鈥?5
鈥?5
鈥?5
Unit
Vdc
V(BR)CBO
Vdc
V(BR)EBO
Vdc
ICBO
nAdc
IEBO
nAdc
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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英文版
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1
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4
