BC184L
BC184L
Silicon NPN Small Signal Transistor
(Note 1)
鈥?BV
CEO
= 30V (Min.)
鈥?h
FE
= 130 (Min.) @V
CE
= 5.0V, I
C
= 100mA
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation (T
a
=25擄C) (Note 2, 3)
Junction Temperature
Storage Temperature
Parameter
Value
45
30
5
500
350
150
- 55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
OB
f
T
h
FE
NF
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current gain Bandwidth Product
Small Signal Current Gain
Noise Figure
Test Condition
I
C
= 10碌A(chǔ)
I
C
= 2mA
I
E
= 10碌A(chǔ)
V
CB
= 30V
V
EB
= 3V
V
CE
= 5V, I
C
= 10碌A(chǔ)
V
CE
= 5V, I
C
= 100mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
I
C
= 100mA, I
B
= 5mA
V
CE
= 5V, I
C
= 2mA
V
CE
= 10V, f = 1MHz
V
CE
= 5V, I
C
= 10mA
f = 100MHz
V
CE
= 5V, I
C
= 2mA
f = 1KHz
V
CE
= 5V, I
C
= 200mA
R
G
= 2K鈩? f = 1KHz
150
450
900
4
dB
0.55
100
130
0.6
0.25
1.2
0.7
5
V
V
V
pF
MHz
Min.
45
30
5
15
15
Typ.
Max.
Units
V
V
V
nA
nA
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150degrees C.
漏2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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