Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ T
A
= 25擄C
Derate above 25擄C
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
BC182
50
60
BC183
30
45
6.0
100
350
2.8
1.0
8.0
鈥?5 to +150
BC184
30
45
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
BC182,A,B
BC183
BC184
1
2
3
CASE 29鈥?4, STYLE 17
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
357
125
Unit
擄C/W
擄C/W
2
BASE
COLLECTOR
1
3
EMITTER
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
BC182
BC183
BC184
V
(BR)CBO
BC182
BC183
BC184
V
(BR)EBO
I
CBO
BC182
BC183
BC184
I
EBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.2
0.2
0.2
鈥?/div>
15
15
15
15
nA
60
45
45
6.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
nA
50
30
30
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
V
Collector鈥揃ase Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 100
mA,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 50 V, V
BE
= 0)
(V
CB
= 30 V, V
BE
= 0)
Emitter鈥揃ase Leakage Current
(V
EB
= 4.0 V, I
C
= 0)
漏
Semiconductor Components Industries, LLC, 2001
1
February, 2001 鈥?Rev. 1
Publication Order Number:
BC182/D
BC182/D相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
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TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 500MA I(C) | TO-5
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1
2
3
4
