Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC177, A, B, C
BC178, A, B, C
BC179, A, B, C
TO-18
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation@ Ta=25 degC
Derate Above 25 deg C
Power Dissipation@ Tc=25 degC
Derate Above 25 deg C
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
SYMBOL
VCEO
VCES
VCBO
VEBO
IC
PD
PD
Tj, Tstg
BC177
45
50
50
5.0
BC178
25
30
30
5.0
0.2
0.6
2.28
1.0
6.67
-65 to +200
BC179
20
25
25
5.0
UNIT
V
V
V
V
A
W
mW/deg C
W
mW/deg C
deg C
Rth(j-c)
175
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
ICES
VCE=20V, IE=0
Collector-Cut off Current
Tamb=125 deg C
VCE=20V, IE=0
VCBO
IC=10uA, IE=0
Collector -Base Voltage
BC177
BC178
BC179
Collector -Emitter Voltage
VCEO
IC=2mA,IB=0
BC177
BC178
BC179
MIN
-
-
50
30
25
45
25
20
5.0
TYP MAX
100
4.0
-
-
-
-
-
UNIT
nA
uA
V
V
V
V
V
V
V
Emitter-Base Voltage
DC Current
VEBO
hFE
IE=10uA, IC=0
IC=2mA, VCE=5V
BC177
BC178
BC179
A Group
B Group
C Group
-
460
800
800
220
460
800
0.20
0.60
0.80
-
0.75
Page 1 of 3
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter on Voltage
Continental Device India Limited
VCE(Sat) IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
VBE(Sat) IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
VBE(on) IC=2mA, VCE=5V
Data Sheet
120
120
180
120
180
380
-
-
-
-
0.90
0.60
V
V
V
V
V
1
2
3
