MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC161鈥?6/D
Amplifier Transistors
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
BC161-16
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
鈥?60
鈥?60
鈥?5.0
鈥?1.0
0.8
4.6
3.7
20
鈥?65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/擄C
Watts
mW/擄C
擄C
3
2
1
CASE 79鈥?4, STYLE 1
TO鈥?9 (TO鈥?05AD)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
219
50
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(IE = 0, VCES = 鈥?60 Vdc)
(IE = 0, VCES = 鈥?60 Vdc, TAmb = 150擄C)
Collector 鈥?Emitter Breakdown Voltage
(IC = 鈥?100
碌A(chǔ)dc,
IE = 0)
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 鈥?10 mAdc, IB = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 鈥?100
m
Adc, IC = 0)
1. Pulsed: Pulse Duration = 300
m
s, Duty Cycle = 2.0%.
ICES
鈥?/div>
鈥?/div>
V(BR)CES
V(BR)CEO
V(BR)EBO
鈥?60
鈥?60
鈥?5.0
鈥?100
鈥?100
鈥?/div>
鈥?/div>
鈥?/div>
nAdc
碌A(chǔ)dc
Vdc
Vdc
Vdc
(Replaces BC160鈥?6/D)
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
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