BB814
Vishay Telefunken
Silicon Epitaxial Planar Dual Capacitance Diode
Features
D
Common cathode
Applications
Tuning of separate resonant circuits, push鈥損ull circuits
in FM range, especially for car radios
94 8550
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
V
RRM
V
R
I
F
T
j
T
stg
Value
20
18
50
125
鈥?5...+150
Unit
V
V
mA
擄
C
擄
C
Electrical Characteristics
T
j
= 25
_
C
Parameter
Reverse current
Diode capacitance
1
)
Test Conditions
V
R
=16V
V
R
=16V, T
j
=60
擄
C
V
R
=2V
V
R
=8V
Capacitance ratio
Series resistance
1
)
Type
Group 1
Group 2
Group 1
Group 2
V
R
=2V,8V, f=1MHz
C
D
=38pF, f=100MHz
Symbol
Min
I
R
I
R
C
D
43
C
D
44.5
C
D
19.1
C
D
19.75
C
D2
/ C
D8
2.05
r
s
Typ
Max
20
200
45
46.5
21.95
22.70
2.25
0.5
Unit
nA
nA
pF
pF
pF
pF
W
In the reverse voltage range of V
R
=2...8V for 4 diodes taped in sequence the max. deviation is 3%.
Document Number 85555
Rev. 3, 01-Apr-99
www.vishay.de
鈥?/div>
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