BB501C Datasheet

IC型號(hào)：
BB501C
PDF描述：
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
文件大小：
72.67KB
PDF頁(yè)數(shù)：
13頁(yè)
芯片廠家：
HITACHI

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BB501C

Build in Biasing Circuit MOS FET IC

UHF RF Amplifier

ADE-208-701C (Z)

4th. Edition

Nov. 1998

Features

鈥?/div>

Build in Biasing Circuit; To reduce using parts cost & PC board space.

鈥?/div>

High gain;

PG = 21.5 dB typ. at f = 900 MHz

鈥?/div>

Low noise;

NF = 1.85 dB typ. at f = 900 MHz

鈥?/div>

Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

鈥?/div>

Provide mini mold packages; CMPAK-4(SOT-343mod)

Outline

CMPAK-4

1. Source

2. Gate1

3. Gate2

4. Drain

Notes: 1. Marking is 鈥淎S鈥撯€?

2. BB501C is individual type number of HITACHI BBFET.

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