BB302C Datasheet

IC型號(hào)：
BB302C
PDF描述：
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
文件大小：
60.69KB
PDF頁(yè)數(shù)：
11頁(yè)
芯片廠家：
HITACHI

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BB302C

Build in Biasing Circuit MOS FET IC

VHF RF Amplifier

ADE-208-573 A (Z)

2nd. Edition

September 1997

Features

鈥?/div>

Build in Biasing Circuit; To reduce using parts cost & PC board space.

鈥?/div>

Low noise characteristics;

(NF = 1.7 dB typ. at f = 200 MHz)

鈥?/div>

Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.

鈥?/div>

Provide mini mold packages; CMPAK-4(SOT-343mod)

Outline

CMPAK-4

1. Source

2. Gate1

3. Gate2

4. Drain

鈥?/div>

Note 1 Marking is 鈥淏W鈥撯€?

鈥?/div>

Note 2 BB302C is individual type number of HITACHI BBFET.

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