BB102M Datasheet

IC型號(hào)：
BB102M
PDF描述：
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
文件大?。?/label>
66.76KB
PDF頁數(shù)：
11頁
芯片廠家：
HITACHI

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BB102M

Build in Biasing Circuit MOS FET IC

UHF RF Amplifier

ADE-208-587 (Z)

1st. Edition

November 1997

Features

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Build in Biasing Circuit; To reduce using parts cost & PC board space.

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Low noise characteristics;

(NF = 2.1 dB typ. at f = 900 MHz)

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Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

鈥?/div>

Provide mini mold packages; MPAK-4(SOT-143mod)

Outline

MPAK-4

1. Source

2. Gate1

3. Gate2

4. Drain

鈥?/div>

Note 1 Marking is 鈥淏W鈥撯€?

鈥?/div>

Note 2 BB302M is individual type number of HITACHI BBFET.

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