Silicon Switching Diodes
BAW 79 A
鈥?BAW 79 D
q
For high-speed switching
q
High breakdown voltage
q
Common cathode
Type
BAW 79 A
BAW 79 B
BAW 79 C
BAW 79 D
Marking
GE
GF
GG
GH
Ordering Code
(tape and reel)
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
Pin Configuration
Package
1)
SOT-89
Maximum Ratings per Diode
Parameter
Reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Surge forward current
t
= 1
碌
s
Total power dissipation
T
S
= 115 藲C
Junction temperature
Symbol
BAW
V
R
V
RM
I
F
I
FM
I
FS
P
tot
T
j
50
50
Values
BAW
BAW
100
100
1
1
10
1
150
鈥?65 鈥?+ 150
W
藲C
200
200
Unit
BAW
400
400
A
V
Storage temperature range
T
stg
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
鈮?/div>
175
鈮?/div>
35
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
脳
40 mm
脳
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
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