BAW75
Vishay Telefunken
Silicon Epitaxial Planar Diode
Applications
Extreme fast switches
94 9367
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
V
P
V
T
j
T
stg
Value
35
25
2000
450
300
150
440
500
200
鈥?5...+200
Unit
V
V
mA
mA
mA
mA
mW
mW
擄
C
擄
C
t
p
=1
m
s
V
R
=0
l=4mm, T
L
=45
擄
C
l=4mm, T
L
25
擄
C
x
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4mm, T
L
=constant
Symbol
R
thJA
Value
350
Unit
K/W
Document Number 85550
Rev. 2, 01-Apr-99
www.vishay.de
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