MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAW56WT1/D
Dual Switching Diode
CATHODE
1
3
ANODE
2
BAW56WT1
Motorola Preferred Device
3
MAXIMUM RATINGS
(TA = 25擄C)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Max
70
200
500
Unit
Vdc
mAdc
mAdc
1
2
CASE 419鈥?2, STYLE 4
SC鈥?0/SOT鈥?23
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
200
1.6
R
q
JA
PD
0.625
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
A1
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100
碌A(chǔ)dc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TJ = 150擄C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150擄C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 60 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 100
鈩?
IR(REC) = 1.0 mAdc) (Figure 1)
1. FR鈥?5 = 1.0
0.75
2. Alumina = 0.4
0.3
V(BR)
IR
鈥?/div>
鈥?/div>
鈥?/div>
CD
VF
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
trr
鈥?/div>
715
855
1000
1250
6.0
ns
鈥?/div>
30
2.5
50
2.0
pF
mVdc
70
鈥?/div>
Vdc
碌A(chǔ)dc
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
BAW56WT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
二極管，整流器 - 陣列
-
1.25V @ 150mA
2.5µA @ 70V
200mA（DC）
70V
6ns
標(biāo)準(zhǔn)
小信號(hào) =
1 對(duì)共陽(yáng)極
表面貼裝
SC-70，SOT-323
SC-70-3（SOT323）
剪切帶 (CT)
BAW56WT1OSCT
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