BAW56TT1
Advance Information
Dual Switching Diode
http://onsemi.com
MAXIMUM RATINGS
(TA = 25擄C)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Max
70
200
500
Unit
Vdc
mAdc
mAdc
3
ANODE
CATHODE
1
2
CATHODE
Preferred Device
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR鈥? Board (1)
TA = 25擄C
Derated above 25擄C
Thermal Resistance,
Junction to Ambient (1)
Total Device Dissipation,
FR鈥? Board (2)
TA = 25擄C
Derated above 25擄C
Thermal Resistance,
Junction to Ambient (2)
Junction and Storage
Temperature Range
(1) FR鈥? @ Minimum Pad
(2) FR鈥? @ 1.0
脳
1.0 Inch Pad
Symbol
PD
225
1.8
R
胃JA
PD
360
2.9
R
胃JA
TJ, Tstg
345
鈥?5 to
+150
mW
mW/擄C
擄C/W
擄C
A1
555
mW
mW/擄C
擄C/W
1
CASE 463
SOT鈥?16/SC鈥?5
STYLE 4
Max
Unit
3
2
DEVICE MARKING
ORDERING INFORMATION
Device
BAW56TT1
Package
SOT鈥?16
Shipping
3000 / Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
漏
Semiconductor Components Industries, LLC, 2000
1
May, 2000 鈥?Rev. 1
Publication Order Number:
BAW56TT1/D