ON Semiconductort
Monolithic Dual Switching Diode
Common Anode
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
70
200
500
Unit
Vdc
mAdc
mAdc
BAW56LT1
ON Semiconductor Preferred Device
3
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥? Board
(1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
CASE 318鈥?8, STYLE 12
SOT鈥?3 (TO鈥?36AB)
ANODE
3
CATHODE
1
2
CATHODE
DEVICE MARKING
BAW56LT1 = A1
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100
碌A(chǔ)dc)
Reverse Voltage Leakage Current
(V
R
= 25 Vdc, T
J
= 150擄C)
(V
R
= 70 Vdc)
(V
R
= 70 Vdc, T
J
= 150擄C)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) (Figure 1) R
L
= 100
鈩?/div>
1. FR鈥? = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
V
(BR)
I
R
鈥?/div>
鈥?/div>
鈥?/div>
C
D
V
F
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
t
rr
鈥?/div>
715
855
1000
1250
6.0
ns
鈥?/div>
30
2.5
50
2.0
pF
mVdc
70
鈥?/div>
Vdc
碌A(chǔ)dc
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 1
Publication Order Number:
BAW56LT1/D
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