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BAW156LT1 Datasheet

  • BAW156LT1

  • Monolithic Dual Switching Diode

  • 2頁

  • LRC

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LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
This switching diode has the following features:
BAW156LT1
3
鈥?/div>
Low Leakage Current Applications
鈥?/div>
Medium Speed Switching Times
鈥?/div>
Available in 8mm Tape and Reel
Use BAW156LT1 to order the 7 inch/3,000 unit reel
Use BAW156LT3 to order the 13inch/10,000 unit reel
1
ANODE
3
CATHODE
1
2
ANODE
2
CASE 318鈥?8, STYLE12
SOT鈥?23 (TO鈥?36AB)
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Symbol
(1)
Value
70
200
500
Max
225
1.8
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board
T
A
= 25擄C
Derate above 25擄C
P
D
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
JA
P
D
556
300
2.4
R
JA
T
J
, T
stg
417
鈥?5 to +150
DEVICE MARKING
BAW156LT1 = JZ
ELECTRICAL CHARACTERISTICS
(T
Characteristic
A
= 25擄C unless otherwise noted)(EACH
DIODE)
Symbol
V
(BR)
I
R
鈥?/div>
C
D
V
F
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
t
rr
鈥?/div>
5.0
80
2.0
900
1000
1100
1250
3.0
碌s
pF
mVdc
Min
70
Max
鈥?/div>
Unit
Vdc
nAdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I
(BR)
= 100
Adc)
Reverse Voltage Leakage Current
(V
R
= 70 Vdc)
(V
R
= 70 Vdc,T
J
=150擄C)
Diode Capacitance(V
R
=0V,f=1.0MHz)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc) (Figure 1)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
G14鈥?/2

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