MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAV99LT1/D
Dual Series Switching Diode
BAV99LT1
Motorola Preferred Device
3
1
2
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current(1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non鈥揜epetitive Peak Forward Current
t = 1.0
m
s
t = 1.0 ms
t = 1.0 A
Symbol
VR
IF
IFM(surge)
VRRM
IF(AV)
IFRM
IFSM
2.0
1.0
0.5
Value
70
215
500
70
715
450
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
CASE 318 鈥?08, STYLE 11
SOT鈥?23 (TO 鈥?236AB)
ANODE
1
3
CATHODE/ANODE
CATHODE
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR鈥? Board,(1) TA = 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
鈥?65 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
BAV99LT1 = A7
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Thermal Clad is a registered trademark of the Berquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola
Inc. 1996
漏
Motorola,
Small鈥揝ignal Transistors, FETs and Diodes Device Data
1