MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAV74LT1/D
Monolithic Dual
Switching Diode
ANODE
1
3
CATHODE
2
ANODE
BAV74LT1
3
1
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
50
200
500
Unit
Vdc
mAdc
mAdc
2
CASE 318 鈥?08, STYLE 9
SOT鈥?23 (TO 鈥?236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
BAV74LT1 = JA
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 5.0
碌A(chǔ)dc)
Reverse Voltage Leakage Current
(VR = 50 Vdc, TJ = 125擄C)
(VR = 50 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100
鈩?
1. FR鈥?5 = 1.0
0.75
2. Alumina = 0.4
0.3
V(BR)
IR
鈥?/div>
鈥?/div>
CD
VF
trr
鈥?/div>
鈥?/div>
鈥?/div>
100
0.1
2.0
1.0
4.0
pF
Vdc
ns
50
鈥?/div>
Vdc
碌A(chǔ)dc
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
BAV74LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
二極管，整流器 - 陣列
-
1V @ 100mA
100nA @ 50V
200mA（DC）
50V
4ns
標(biāo)準(zhǔn)
小信號(hào) =
1 對(duì)共陰極
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
BAV74LT1OSCT
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