ON Semiconductort
Dual Switching Diode
MAXIMUM RATINGS
(T
A
= 25擄C)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Max
70
200
500
Unit
Vdc
mAdc
mAdc
BAV70WT1
ON Semiconductor Preferred Device
3
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥? Board
(1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate
(2)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
200
1.6
R
qJA
P
D
0.625
300
2.4
R
qJA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
3
CATHODE
CASE 419鈥?4, STYLE 5
SC鈥?0/SOT鈥?23
ANODE
1
2
DEVICE MARKING
BAV70WT1 = A4
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100
碌A(chǔ)dc)
Reverse Voltage Leakage Current
(V
R
= 70 Vdc)
(V
R
= 50 Vdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, R
L
= 100
鈩?
I
R(REC)
= 1.0 mAdc) (Figure 1)
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20 ns) (Figure 2)
1. FR鈥? = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
V
(BR)
70
鈥?/div>
Vdc
I
R1
I
R2
C
D
V
F
鈥?/div>
鈥?/div>
鈥?/div>
5.0
100
1.5
碌A(chǔ)dc
nAdc
pF
mVdc
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
t
rr
V
RF
鈥?/div>
鈥?/div>
715
855
1000
1250
6.0
1.75
ns
V
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 1
Publication Order Number:
BAV70WT1/D
BAV70WT1/D相關(guān)型號PDF文件下載
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