LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Common Cathode
BAV70LT1
3
1
ANODE
3
CATHODE
2
ANODE
1
2
CASE 318鈥?8, STYLE 9
SOT鈥?3 (TO鈥?36AB)
DEVICE MARKING
BAV70LT1 = A4
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
I
Symbol
V
R
I
F
FM(surge)
Value
70
200
500
Unit
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
R
胃JA
P
D
R
胃JA
T
J
, T
stg
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100
碌A(chǔ)dc)
Reverse Voltage Leakage Current
(V
R
= 25 Vdc, T
J
= 150擄C)
(V
R
= 70 Vdc)
(V
R
= 70 Vdc, T
J
= 150擄C)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time
R
L
= 100
鈩?/div>
(I
F
= I
R
= 10 mAdc, V
R
= 5.0 Vdc, I
R(REC)
= 1.0 mAdc) (Figure 1)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)
I
R
鈥?/div>
鈥?/div>
鈥?/div>
C
D
V
F
70
鈥?/div>
Vdc
碌A(chǔ)dc
60
2.5
100
1.5
pF
mVdc
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
t
rr
鈥?/div>
715
855
1000
1250
6.0
ns
G5鈥?/1
BAV70LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
二極管，整流器 - 陣列
-
1.25V @ 150mA
2.5µA @ 70V
200mA（DC）
70V
6ns
標(biāo)準(zhǔn)
小信號(hào) =
1 對(duì)共陰極
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
BAV70LT1OSCT
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