BAV70 / BAV74
Discrete POWER & Signal
Technologies
BAV70 / 74
3
CONNECTION DIAGRAMS
3
3
A4
2
1
2
1
SOT-23
1
BAV70
MARKING
A4
BAV74
JA
2
High Conductance Ultra Fast Diode
Sourced from Process 1P. See BAV99 for characteristics.
Absolute Maximum Ratings*
Symbol
W
IV
I
O
I
F
i
f
i
f(surge)
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
TA = 25擄C unless otherwise noted
Parameter
BAV70
BAV74
Value
70
50
200
600
700
1.0
2.0
-55 to +150
150
Units
V
V
mA
mA
mA
A
A
擄C
擄C
T
stg
T
J
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Max
BAV70/74
350
2.8
357
Units
mW
mW/擄C
擄C/W
茫
1997 Fairchild Semiconductor Corporation
1
2
3
