BAV300...BAV303
Vishay Telefunken
Silicon Epitaxial Planar Diodes
Features
D
D
D
D
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BAV100...BAV103 / BAV200...BAV203
96 12315
Applications
General purposes
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Peak reverse voltage
g
Test Conditions
Type
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
Symbol
V
RRM
V
RRM
V
RRM
V
RRM
V
R
V
R
V
R
V
R
I
F
I
FSM
I
FM
T
j
T
stg
Value
60
120
200
250
50
100
150
200
250
1
625
175
鈥?5...+175
Unit
V
V
V
V
V
V
V
V
mA
A
mA
擄
C
擄
C
Reverse voltage
g
Forward current
Peak forward surge current
Forward peak current
Junction temperature
Storage temperature range
t
p
=1s, T
j
=25
擄
C
f=50Hz
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
mounted on epoxy鈥揼lass hard tissue, Fig. 1
35
m
m copper clad, 0.9 mm
2
copper area per
l d 09
electrode
Symbol
R
thJA
Value
500
Unit
K/W
Document Number 85545
Rev. 3, 01-Apr-99
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
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