鈥?/div>
Available in 8 mm Tape and Reel
Use BAV199LT1 to order the 7 inch/3,000 unit reel
Use BAV199LT3 to order the 13 inch/10,000 unit reel
ANODE
1
3
CATHODE/ANODE
CATHODE
2
BAV199LT1
ON Semiconductor Preferred Device
3
1
2
CASE 318鈥?8, STYLE 11
SOT鈥?3 (TO鈥?36AB)
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
(1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non鈥揜epetitive Peak Forward Current t = 1.0
碌s
t = 1.0 ms
t = 1.0 A
Symbol
V
R
I
F
I
FM(surge)
V
RRM
I
F(AV)
I
FRM
I
FSM
Value
70
215
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
Vdc
mAdc
mAdc
Adc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥? Board
(1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate
(2)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
R
qJA
P
D
Max
225
1.8
556
300
2.4
R
qJA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
BAV199LT1 = JY
1. FR鈥? = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 2
Publication Order Number:
BAV199LT1/D
1
2
3
4
