LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
This switching diode has the following features:
.
Low Leakage Current Applications
.
Medium Speed Switching Times
.
Available in 8 mm Tape and Reel
Use BAV170LT1 to order the 7 inch/3,000 unit reel
Use BAV170LT3 to order the 13 inch/10,000 unit reel
1
2
1
ANODE
3
CATHODE
2
ANODE
BAV170LT1
3
CASE 318鈥?8, STYLE 9
SOT鈥?23 (TO鈥?36AB)
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Symbol
P
D
Value
70
200
500
Max
225
1.8
Unit
Vdc
mAdc
mAdc
Unit
mW
mW擄C
擄C/W
mW
mW擄C
擄C/W
擄C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board
(1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate
(2)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
胃JA
P
D
556
300
2.4
R
胃JA
T
J
, T
stg
417
-55 to +150
DEVICE MARKING
BAV170LT1 = JX
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
V
(BR)
I
R
C
D
V
F
Min
70
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
5.0
80
2.0
900
1000
1100
1250
3.0
Unit
Vdc
nAdc
pF
mVdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
(BR)
= 100
碌A(chǔ)dc)
Reverse Voltage Leakage Current (V
R
= 70 Vdc)
Reverse Voltage Leakage Current
(V
R
= 70 Vdc, T
J
= 150擄C)
Diode Capacitance (V
R
= 0 V, f = 1.0 MHz)
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage
(I
F
= 10 mAdc)
Forward Voltage
(I
F
= 50 mAdc)
Forward Voltage
(I
F
= 150 mAdc)
Reverse Recovery Time
R
L
= 100
鈩?/div>
(I
F
= I
R
= 10 mAdc) (Figure 1)
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
t
rr
碌s
G8鈥?/2
BAV170LT1相關(guān)型號(hào)PDF文件下載
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