LESHAN RADIO COMPANY, LTD.
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low forward
voltage reduces conduction loss. Miniature surface mount package is excel-
lent for hand held and portable applications where space is limited.
鈥?Extremely Fast Switching Speed
鈥?Low Forward Voltage 鈥?0.35 Volts (Typ) @ I
F
= 10 mAdc
BAT54SWT1
30 VOLTS DUAL SERIES
SCHOTTKY AND BARRIER
DIODES
3
1
2
CASE 419, STYLE 9
SOT鈥?23 (SC鈥?0)
ORDERING INFORMATION
Device
BAT54SWT1
Package
SOT鈥?23
Shipping
3000/Tape & Reel
ANODE
1
3
CATHODE
2
Preferred:
devices are recommended choices for future use and best overall value.
CATHODE/ANODE
DEVICE MARKING
BAT54LT1 = B8
MAXIMUM RATINGS
(T
J
= 125擄C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25擄C
Derate above 25擄C
Forward Current(DC)
Junction Temperature
Storage Temperature Range
I
F
T
J
T
stg
Symbol
V
R
P
F
Value
30
200
1.6
200Max
125Max
鈥?5 to +150
Unit
Volts
mW
mW/擄C
mA
擄C
擄C
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
碌A(chǔ))
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc, Figure 1)
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non鈥揜epetitive Peak Forward Current (t < 1.0 s)
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
t
rr
V
F
V
F
I
F
I
FRM
I
FSM
Min
30
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
7.6
0.5
0.22
0.41
0.52
鈥?/div>
0.29
0.35
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
10
2.0
0.24
0.5
0.8
5.0
0.32
0.40
200
300
600
Unit
Volts
pF
碌A(chǔ)dc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
mAdc
mAdc
mAdc
BAT54SWT1鈥?/2
BAT54SWT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
二極管，整流器 - 陣列
-
800mV @ 100mA
2µA @ 25V
200mA（DC）
30V
5ns
肖特基
小信號(hào) =
1 對(duì)串聯(lián)
表面貼裝
SC-70，SOT-323
SC-70-3（SOT323）
剪切帶 (CT)
BAT54SWT1OSCT
BAT54SWT1相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
Small Signal Schottky Diodes, Single Dual
-
英文版
Surface Mount Schottky Diode - Silicon epitaxial planar type
FORMOSA
-
英文版
Schottky Diodes
FAIRCHILD
-
英文版
DISCRETE SEMICONDUCTORS
PHILIPS
-
英文版
Surface Mount Schottky Diode
COMCHIP
-
英文版
Surface mount Schottky-Barrier Single-/ Double-Diodes
DIOTEC
-
英文版
250mWatt, 30Volt Schottky Barrier Diode
-
英文版
SURFACE MOUNT SCHOTTKY BARRIER DIODE
DIODES
-
英文版
SCHOTTKY BARRIER DIODE
-
英文版
SCHOTTKY BARRIER DIODE
ZOWIE
-
英文版
SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
ZETEX
-
英文版
SURFACE MOUNT SCHOTTKY BARRIER DIODE
WTE
-
英文版
SMALL SIGNAL SCHOTTKY DIODE
-
英文版
SURFACT MOUNT SCHOTTKY BARRIER
PANJIT
-
英文版
Small Signal Schottky (double) diodes
CYSTEKEC
-
英文版
Diode Schottky 30V 200mA Surface Mount SOT-23-3 (TO-236)
-
英文版
-
英文版
DISCRETE SEMICONDUCTORS
PHILIPS [P...
-
英文版
SCHOTTKY BARRIER DIODE
ZOWIE [Zow...
-
英文版
Schottky Barrier Diode
FAIRCHILD ...
1
2
