BAT54SWT1G/BAT54CWT1G Schottky Diodes
April 2005
BAT54SWT1G/BAT54CWT1G
Schottky Diodes
Connection Diagram
3
BAT54SWT1G
BAT54CWT1G
3
3
1
2
MARKING
1
2
1
2
SOT-323
BAT54SWT1G = YB
BAT54CWT1G = YC
Absolute Maximum Ratings *
Symbol
V
RRM
I
F(AV)
I
FSM
T
STG
T
J
T
a
= 25擄C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Storage Temperature Range
Operating Junction Temperature
Value
30
200
600
-65 to +125
-65 to +125
Unit
V
mA
mA
擄C
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
胃JA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
232
430
Unit
mW
擄C/W
FR-4 board (3.0
脳
4.5
脳
0.062鈥?by 1.0
脳
0.5鈥?land pads)
Electrical Characteristics
Symbol
V
R
V
F
T
C
= 25擄C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
I
R
= 10碌A(chǔ)
I
F
= 0.1mA
I
F
= 1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
V
R
= 25V
Conditions
Min.
30
Max.
240
320
400
500
0.8
2
10
5.0
Units
V
mV
mV
mV
mV
V
碌A(chǔ)
pF
ns
I
R
C
T
t
rr
Reverse Leakage
Total Capacitance
Reverse Recovery Time
V
R
= 1V, f = 1.0MHz
I
F
= I
R
= 10mA, I
RR
= 1.0mA,
R
L
= 100鈩?/div>
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BAT54SWT1G/BAT54CWT1G Rev. A
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