SOT23 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1聳 SEPTEMBER 1995
1
1
BAT54 SERIES
1
7
1
1
3
2
3
2
3
3
2
2
3
BAT54
SINGLE
L4Z
BAT54A
COMMON
ANODE
L42
BAT54S
SERIES
L44
BAT54C
COMMON
CATHODE
L43
Device Type
Pin Configuration
Partmarking Detail
FEATURES
: Low V
F
& High Current Capability
APPLICATIONS
: PSU, Mobile Telecomms & SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Forward Current
Forward Voltage @ I
F
=10mA
Repetitive Peak Forward Current
Non Repetitive Forward Current t<1s
Power Dissipation at T
amb
=25擄C
Storage Temperature Range
JunctionTemperature
隴
SYMBOL
V
R
I
F
V
F
I
FRM
I
FSM
P
tot
T
stg
T
j
VALUE
30
200
400
300
600
330
-55 to +150
125
UNIT
V
mA
mV
mA
mA
mW
擄C
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Reverse Breakdown
Voltage
Forward Voltage
SYMBOL
V
(BR)R
V
F
MIN.
30
TYP.
50
135
200
280
350
530
2.5
7.5
240
320
400
500
1000
4
10
5
MAX. UNIT
V
mV
mV
mV
mV
mV
碌
A
CONDITIONS.
I
R
=10
碌
A
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
V
R
=25V
f=1MHz,V
R
=1V
switched from
I
F
=10mA to I
R
=10mA
R
L
=100
鈩?/div>
, Measured
at I
R
=1mA
Reverse Current
Diode Capacitance
Reverse Recover
Time
I
R
C
D
t
rr
pF
ns
隴 Dual Device; For simultaneous continuous use T
j
=100擄C.
3-4
1
2
