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BAS86 Datasheet

  • BAS86

  • Schottky Barrier Diode

  • 4頁(yè)

  • VISHAY   VISHAY

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BAS86
Vishay Telefunken
Schottky Barrier Diode
Features
D
Integrated protection ring against
static discharge
D
Very low forward voltage
Applications
Applications where a very low forward voltage
is required
94 9371
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Junction temperature
Storage temperature range
Test Conditions
t
p
=10 ms
t
p
鈮?s
Type
Symbol
V
R
I
FSM
I
FRM
I
F
I
FAV
T
j
T
stg
Value
50
5
500
200
200
125
鈥?5...+150
Unit
V
A
mA
mA
mA
擄
C
擄
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
R
thJA
Value
320
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
g
Test Conditions
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
V
R
=40V
V
R
=1V, f=1MHz
Type
Symbol
V
F
V
F
V
F
V
F
V
F
I
R
C
D
Min
Typ
Max
300
380
450
600
900
5
8
Unit
mV
mV
mV
mV
mV
m
A
pF
Reverse current
Diode capacitance
Document Number 85511
Rev. 3, 01-Apr-99
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
1 (4)

BAS86 產(chǎn)品屬性

  • 肖特基

  • 200mA

  • 50V

  • 900mV

  • 4ns

  • 500mA

  • -65°C 到 +125°C

  • SOD-80

  • 2

  • No SVHC (18-Jun-2012)

  • SOD-80

  • 380mV

  • 200mA

  • 5A

  • 125°C

  • 表面安裝

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