BAS85
SILICON SCHOTTKY BARRIER DIODE
Features
路
路
路
For general applications
Low turn-on voltage
PN junction guard ring
A
B
C
Mechanical Data
路
路
Glass case
Weight: 0.05g (approx)
A
B
C
Min
3.4
1.40
0.20
Max
3.6
1.50
0.40
All Dimensions in mm
Maximum Ratings
@ T
A
= 25擄C unless otherwise specified
Characteristic
Continuous reverse voltage
Forward continuous current*
Peak forward current*
Surge forward current*
Power dissipation*
Junction temperature
Operating temperature range
Storage temperature range
@ tp = 1s
@ T
A
= 65擄C
Symbol
V
R
I
F
I
FM
I
FSM
P
tot
T
j
T
A
T
STG
Value
30
200
300
600
200
125
-65 to +125
-65 to +150
Unit
V
mA
mA
mA
mW
擄C
擄C
擄C
Electrical Characteristics
Characteristic
Reverse breakdown voltage
@ T
j
= 25擄C unless otherwise specified
Symbol
V
(BR)R
Min
30
Typ
鈥?/div>
Max
鈥?/div>
Unit
V
10
mA
pulses
* Valid provided that electrodes are kept at ambient temperature.
DS30189 Rev. A-5
1 of 1
BAS85
1