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BAS79A...BAS79D

Silicon Switching Diodes

Switching applications

High breakdown voltage

Common cathode

4

Total power dissipation,

T

S

= 114 擄C

Junction temperature

Storage temperature

Thermal Resistance

Junction - soldering point

1)

R

thJS

1For calculation of

R

thJA

please refer to Application Note Thermal Resistance

3

2

2, 4

1

3

EHA00005

1

VPS05163

Type

BAS79A

BAS79B

BAS79C

BAS79D

Maximum Ratings

Parameter

Diode reverse voltage

Peak reverse voltage

Forward current

Peak forward current

Marking

BAS 79A

BAS 79B

BAS 79C

BAS 79D

1 = A1

1 = A1

1 = A1

1 = A1

Pin Configuration

2=C1/2 3 = A2

2=C1/2 3 = A2

2=C1/2 3 = A2

2=C1/2 3 = A2

Package

4=C1/2 SOT223

4=C1/2 SOT223

4=C1/2 SOT223

4=C1/2 SOT223

Symbol

V

R

V

RM

I

F

I

FM

I

FS

P

tot

T

j

T

stg

BAS

79A

50

50

BAS

79B

100

100

1

1

10

1.2

BAS

79C

200

200

BAS

79D

400

400

Unit

V

A

Surge forward current, t = 1 s

W

擄C

150

-65 ... 150

30

K/W

1

Aug-20-2001

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