鈥?/div>
Low Forward Voltage 鈥?0.75 Volts (Typ) @ I
F
= 10 mAdc
BAS70LT1
ON Semiconductor Preferred Device
70 VOLTS
SCHOTTKY BARRIER DIODES
MAXIMUM RATINGS
(T
J
= 150擄C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25擄C
Derate above 25擄C
Operating Junction and Storage
Temperature Range
Symbol
V
R
P
F
225
1.8
T
J,
T
stg
鈥?5 to +150
mW
mW/擄C
擄C
Value
70
Unit
Volts
1
2
3
CASE 318鈥?8, STYLE 8
SOT鈥?3 (TO鈥?36AB)
DEVICE MARKING
BAS70LT1 = BE
3
CATHODE
1
ANODE
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
碌A(chǔ))
Total Capacitance (V
R
= 0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 50 V)
(V
R
= 70 V)
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Forward Voltage (I
F
= 15 mAdc)
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
Min
70
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
2.0
0.1
10
410
750
1.0
Unit
Volts
pF
碌A(chǔ)dc
mVdc
mVdc
Vdc
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 2
Publication Order Number:
BAS70LT1/D
BAS70LT1/D相關(guān)型號(hào)PDF文件下載
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