JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate DIODE
BAS40W SERIES
FEATURES
Power dissipation
P
D
: 200 mW錛圱amb=25鈩冿級
Collector current
I
F:
200 mA
Collector-base voltage
V
R
:
40V
Operating and storage junction temperature range
T
J
錛孴
stg
: -55鈩?to +150鈩冦€€
SCHOTTKY DIODE
錛籌集錛達(dá)紞錛擄紥錛?/div>
1.BASE
2.EMITTER銆€
3.COLLECTOR銆€
錛戯紟錛掞紩鹵錛愶紟錛愶紩
錛掞紟錛擄紣鹵錛愶紟錛愶紩
錛戯紟錛擄紣鹵錛愶紟錛愶紦
錛戯紟錛愶紤銆€錛詫譏錛?/div>
銆€
BAS40W Marking:43.K43
BAS40W-04 Marking:44.K44
BAS40W-05 Marking:45.K45
BAS40W-06 Marking:46.K46
ELECTRICAL CHARACTERISTICS錛圱amb=25鈩?/div>
unless
otherwise
specified錛?/div>
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
V
(BR) R
I
R
V
F
C
D
t
rr
Test
I
R
= 10碌A(chǔ)
V
R
=30V
I
F
=1mA
I
F
=40mA
V
R
=0V
conditions
MIN
40
MAX
錛愶紟錛擄紣
Unit : mm
UNIT
V
錛掞紟錛愶紣鹵錛愶紟錛愶紩
200
380
1000
f=1MHz
5
5
nA
mV
pF
nS
I
F
=10mA through I =10mA
R
to IR=1mA
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