JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS40 SERIES
FEATURES
SCHOTTKY DIODE
SOT鈥?3
Power dissipation
P
D
:
200
mW錛圱amb=25鈩冿級(jí)
Forward Current
I
F
:
200
mA
Reverse Voltage
V
R
:
40
V
Operating and storage junction temperature range
T
J
錛孴
stg
: -55鈩?to +150
錛戯紟錛?/div>
錛掞紟錛?/div>
錛戯紟錛?/div>
錛愶紟錛欙紩
錛掞紟錛?/div>
錛戯紟錛?/div>
錛愶紟錛欙紩
Unit : mm
BAS40 Marking:43
BAS40-04
Marking:44
BAS40-05
unless
Test
Marking:45
otherwise
BAS40-06
specified錛?/div>
MIN
40
ELECTRICAL CHARACTERISTICS錛圱amb=25鈩?/div>
Parameter
Reverse breakdown voltage
Reverse voltage
leakage current
Symbol
V
(BR)
I
R
conditions
錛愶紟錛?/div>
Marking:46
MAX
UNIT
V
I
R
= 100
渭
A
V
R
=30V
100
錕?frac12;錕?/div>
A
Forward
voltage
V
F
I
F
=1mA
I
F
=40mA
380
1000
mV
Diode
capacitance
C
D
V
R
=0V
f=1MHz
5
錕?frac12;錕斤雞
錕?frac12;錕斤汲銆€
Reverse recovery time
t
rr
I
F
=10mA through I
R
=10mA
to I
R
=1mA
5
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