voltage and fast switching.
鈾?/div>
These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
1
2
max. .004 (0.1)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
MECHANICAL DATA
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Dimensions in inches and (millimeters)
3
3
Top View
1
2
1
2
BAS40
Marking: 43
3
BAS40-04
Marking: 44
3
Top View
1
2
1
2
BAS40-05
Marking: 45
BAS40-06
Marking: 46
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE
Ratings at 25 擄C ambient temperature unless otherwise specified
Symbol
Repetitive Peak Reverse Voltage
Forward Continuous Current at T
amb
= 25 擄C
Surge Forward Current at t
p
< 1 s, T
amb
= 25 擄C
Power Dissipation
1)
at T
amb
= 25 擄C
Junction Temperature
Storage Temperature Range
1)
Value
40
200
1)
600
1)
200
1)
150
鈥?5 to +150
Unit
V
mA
mA
mW
擄C
擄C
V
RRM
I
F
I
FSM
P
tot
T
j
T
S
Device on fiberglass substrate, see layout
4/98
1
2
