BAS35
BAS35
Connection Diagram
3
3
3
2
1
L22
1
2
1
2
SOT-23
Small Signal Diode
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25擄C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
120
200
1.0
2.0
-55 to +150
150
Units
V
mA
A
A
擄C
擄C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
A
= 25擄C unless otherwise noted
Parameter
Value
350
357
Units
mW
擄C/W
Electrical Characteristics
Symbol
V
R
V
F
Parameter
Breakdown Voltage
Forward Voltage
Test Conditions
I
R
= 1.0 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
I
F
= 400 mA
V
R
= 90 V
V
R
= 90 V, T
A
= 150擄C
V
R
= 0, f = 1.0 MHz
I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100
鈩?/div>
Min
120
Max
750
840
900
1.0
1.25
100
100
35
50
Units
V
mV
mV
mV
V
V
nA
碌A(chǔ)
pF
ns
I
R
C
T
t
rr
Reverse Current
Total Capacitance
Reverse Recovery Time
錚?001
Fairchild Semiconductor Corporation
BAS35, Rev. C
1
2
