鈥?/div>
Device Marking: BAS19LT1 = JP
Device Marking:
BAS20LT1 = JR
Device Marking:
BAS21LT1 = JS
http://onsemi.com
HIGH VOLTAGE
SWITCHING DIODE
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
BAS19
BAS20
BAS21
Continuous Forward Current
Peak Forward Surge Current
I
F
I
FM(surge)
Symbol
V
R
120
200
250
200
625
mAdc
mAdc
Value
Unit
Vdc
3
CATHODE
1
ANODE
3
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥? Board
(Note 1.)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate
(Note 2.)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
Symbol
P
D
Max
225
Unit
mW
SOT鈥?3
CASE 318
STYLE 8
MARKING DIAGRAM
1.8
R
qJA
P
D
556
300
mW/擄C
擄C/W
mW
Jx
x
M
= Specific Device Code
= P, R or S
= Date Code
Jx M
2.4
R
qJA
T
J
, T
stg
417
鈥?5 to
+150
mW/擄C
擄C/W
擄C
1. FR鈥? = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
BAS19LT1
BAS20LT1
BAS21LT1
Package
SOT鈥?3
SOT鈥?3
SOT鈥?3
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
April, 2001 鈥?Rev. 1
Publication Order Number:
BAS19LT1/D