SOT23 SILICON HIGH
SPEED SWITCHING DIODE
ISSUE 2 聳 JANUARY 1995
PIN CONFIGURATION
BAS19
BAS20
BAS21
2
1
PARTMARKING DETAILS
BAS19 聳 A8
BAS20 聳 A81
BAS21 聳 A82
3
!
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Repetative Peak Reverse Voltage
Average Forward Rectified Current
Forward Current
Repetative Peak Forward Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature
Range
SYMBOL
V
R
V
RRM
I
F(AV)
I
F
I
FRM
P
tot
T
j
:T
stg
BAS19
100
120
BAS20
150
200
200
200
625
330
-55 to +150
BAS21
200
250
UNIT
V
V
mA
mA
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Reverse
Breakdown
Voltage
SYMBOL
V
(BR)
BAS19
BAS20
BAS21
Reverse Current
I
R
120
200
250
100
100
1.00
1.25
5
5
50
鈩?/div>
MIN. TYP.
MAX. UNIT CONDITIONS.
V
V
V
碌
A
I
R
=100
碌
A (1)
I
R
=100
碌
A (1)
I
R
=100
碌
A (2)
V
R
=V
R
max
V
R
=V
R
max, T
J
=150擄C
IF=100mA
I
F
=200mA
I
F
=10mA
f=1MHz
I
F
=30mA to I
R
=30mA
R
L
=10
鈩?/div>
measured at I
R
=3mA
nA
Static Forward Voltage V
F
Differential Resistance
Diode Capacitance
r
diff
C
d
pF
ns
Reverse Recovery Time t
rr
(1)
(2)
Measured under pulsed conditions. Pulse width=300碌s. Duty cycle
鈮?/div>
2%
At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage
limited to 275V
Spice parameter data is available upon request for this device
PAGE NO
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