Switching Diode
BAS16
Silicon epitaxial planar type
Formosa MS
SOT-23
0.040 (1.02)
0.035 (0.88)
Features
Low power loss, high efficiency
0.017 (0.42)
(C)
R 0.05
(0.002)
0.118 (3.00)
0.110 (2.80)
.079(2.00)
.071(1.80)
High speed ( t
rr
< 4 ns )
(B)
(A)
0.055 (1.40)
0.028 (0.70)
0.020 (0.50)
0.102 (2.60)
0.094 (2.40)
Mechanical data
Case : Glass, SOT-23
0.047 (1.20)
0.045 (1.15)
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
0.033 (0.85)
Dimensionsininchesand(millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Non-Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward voltage
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature
V
R
= 0
t
p
= 1 us
CONDITIONS
Symbol
V
RM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
V
T
j
T
STG
-55
MIN.
TYP.
MAX.
100
75
2.0
500
300
200
350
125
+125
UNIT
V
V
A
mA
mA
mA
mW
o
o
0.015 (0.38)
High reliability
C
C
ELECTRICAL CHARACTERISTICS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward voltage
Reverse current
Breakdown current
Diode capacitance
Rectification efficiency
Reverse recovery time
I
F
= 5mA
I
F
= 10mA
V
R
= 75V
I
R
= 100uA , T
P
/T = 0.01 T
P
= 0.3ms
V
R
= 0 , f = 1MHz , V
HF
= 50mV
V
HF
= 2V , f = 100MHz
I
F
=10mA, V
R
=6V, I
RR
= 0.1 X I
R
, R
L
=100
OHM
CONDITIONS
Symbol
V
F
V
F
I
R
V
(BR)
C
D
n
R
t
rr
45
6
100
2.0
MIN.
0.62
0.86
TYP.
MAX.
0.72
1.00
5.0
UNIT
V
V
uA
V
pF
%
ns
1
2
