MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAS16WT1/D
Silicon Switching Diode
3
CATHODE
1
ANODE
BAS16WT1
Motorola Preferred Device
3
MAXIMUM RATINGS
(TA = 25擄C)
Rating
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10
碌s
Total Power Dissipation, One Diode Loaded
TA = 25擄C
Derate above 25擄C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Operating and Storage Junction
Temperature Range
Symbol
VR
IR
IFM(surge)
PD
Max
75
200
500
200
1.6
Unit
V
mA
mA
mW
mW/擄C
1
2
CASE 419鈥?2, STYLE 2
SC鈥?0/SOT鈥?23
TJ, Tstg
鈥?55 to +150
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Symbol
R
胃JA
Max
0.625
Unit
擄C/mW
DEVICE MARKING
A6
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
Reverse Current
(VR = 75 V)
(VR = 75 V, TJ = 150擄C)
(VR = 25 V, TJ = 150擄C)
Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50
鈩?
(Figure 1)
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500
鈩?
(Figure 2)
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Symbol
VF
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
715
866
1000
1250
Unit
mV
IR
鈥?/div>
鈥?/div>
鈥?/div>
CD
trr
QS
VFR
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
50
30
2.0
6.0
45
1.75
碌A(chǔ)
pF
ns
PC
V
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
BAS16WT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
單二極管/整流器
-
標準
75V
-
1.25V @ 150mA
快速恢復(fù) = 200mA（Io）
6ns
1µA @ 75V
2pF @ 0V，1MHz
表面貼裝
SC-70，SOT-323
SC-70-3（SOT323）
剪切帶 (CT)
BAS16WT1OSCT
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