ON Semiconductort
Silicon Switching Diode
MAXIMUM RATINGS
(T
A
= 25擄C)
Rating
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10
碌s
Total Power Dissipation, One Diode Loaded
T
A
= 25擄C
Derate above 25擄C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Operating and Storage Junction
Temperature Range
Symbol
V
R
I
R
I
FM(surge)
P
D
Max
75
200
500
200
1.6
Unit
V
mA
mA
mW
mW/擄C
BAS16WT1
ON Semiconductor Preferred Device
3
1
2
CASE 419鈥?4, STYLE 2
SC鈥?0/SOT鈥?23
T
J
, T
stg
鈥?5 to +150
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Symbol
R
胃JA
Max
0.625
Unit
擄C/mW
3
CATHODE
1
ANODE
DEVICE MARKING
BAS16WT1 = A6
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Forward Voltage
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 50 mA)
(I
F
= 150 mA)
Reverse Current
(V
R
= 75 V)
(V
R
= 75 V, T
J
= 150擄C)
(V
R
= 25 V, T
J
= 150擄C)
Capacitance
(V
R
= 0, f = 1.0 MHz)
Reverse Recovery Time
(I
F
= I
R
= 10 mA, R
L
= 50
鈩?
(Figure 1)
Stored Charge
(I
F
= 10 mA to V
R
= 6.0 V, R
L
= 500
鈩?
(Figure 2)
Forward Recovery Voltage
(I
F
= 10 mA, t
r
= 20 ns) (Figure 3)
Symbol
V
F
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
I
R
鈥?/div>
鈥?/div>
鈥?/div>
C
D
t
rr
QS
V
FR
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
50
30
2.0
6.0
45
1.75
pF
ns
PC
V
715
866
1000
1250
碌A(chǔ)
Min
Max
Unit
mV
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 2
Publication Order Number:
BAS16WT1/D
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