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BAS16TT1 Datasheet

  • BAS16TT1

  • Silicon Switching Diode

  • 8頁

  • ONSEMI

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BAS16TT1
Advance Information
Silicon Switching Diode
http://onsemi.com
MAXIMUM RATINGS
(T
A
= 25擄C)
Rating
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10
m
s
Symbol
V
R
I
F
I
FM(surge)
Max
75
200
500
Unit
V
mA
mA
3
CATHODE
1
ANODE
Preferred Device
THERMAL CHARACTERISTICS
Characteristic
Total Power Dissipation,
(1)
T
A
= 25擄C
Operating and Storage Junction
Temperature Range
Thermal Resistance,
Junction to Ambient
Symbol
P
D
T
J
, T
stg
R
胃JA
Max
150
鈥?5 to
+150
833
Unit
mW
擄C
擄C/W
3
2
1
CASE 463
SOT鈥?16/SC鈥?5
STYLE 2
(1) Device mounted on FR鈥? glass epoxy printed circuit board using the
minimum recommended footpad.
DEVICE MARKING
A6
ORDERING INFORMATION
Device
BAS16TT1
Package
SOT鈥?16
Shipping
3000 / Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Semiconductor Components Industries, LLC, 2000
1
March, 2000 鈥?Rev. 0
Publication Order Number:
BAS16TT1/D

BAS16TT1 產(chǎn)品屬性

  • ON Semiconductor

  • 發(fā)光二極管(通用、電源、轉(zhuǎn)換)

  • Switching Diodes

  • 75 V

  • 0.5 A

  • 0.5 A

  • Single

  • 6 ns

  • 1.25 V

  • 1 uA

  • 225 mW

  • - 55 C to + 150 C

  • SC-75-3

  • Reel

  • + 150 C

  • - 55 C

  • SMD/SMT

  • 3000

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