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BAS16TT1

Advance Information

Silicon Switching Diode

http://onsemi.com

MAXIMUM RATINGS

(TA = 25擄C)

Rating

Continuous Reverse Voltage

Recurrent Peak Forward Current

Peak Forward Surge Current

Pulse Width = 10

m

s

Symbol

VR

IF

IFM(surge)

Max

75

200

500

Unit

V

mA

mA

3

CATHODE

1

ANODE

Preferred Device

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation,

FR鈥? Board (1)

TA = 25擄C

Derated above 25擄C

Thermal Resistance,

Junction to Ambient (1)

Total Device Dissipation,

FR鈥? Board (2)

TA = 25擄C

Derated above 25擄C

Thermal Resistance,

Junction to Ambient (2)

Junction and Storage

Temperature Range

(1) FR鈥? @ Minimum Pad

(2) FR鈥? @ 1.0

脳

1.0 Inch Pad

Symbol

PD

225

1.8

R

胃JA

PD

360

2.9

R

胃JA

TJ, Tstg

345

鈥?5 to

+150

mW

555

mW

mW/擄C

擄C/W

Max

Unit

3

2

1

CASE 463

SOT鈥?16/SC鈥?5

STYLE 2

DEVICE MARKING

mW/擄C

擄C/W

A6

擄C

ORDERING INFORMATION

Device

BAS16TT1

Package

SOT鈥?16

Shipping

3000 / Tape & Reel

Preferred

devices are recommended choices for future use

and best overall value.

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

漏

Semiconductor Components Industries, LLC, 2000

1

May, 2000 鈥?Rev. 1

Publication Order Number:

BAS16TT1/D

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