MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAS16LT1/D
Switching Diode
3
CATHODE
1
ANODE
BAS16LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
75
200
500
Unit
Vdc
mAdc
mAdc
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
CASE 318 鈥?08, STYLE 8
SOT鈥?23 (TO 鈥?236AB)
DEVICE MARKING
BAS16LT1 = A6
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 75 Vdc)
(VR = 75 Vdc, TJ = 150擄C)
(VR = 25 Vdc, TJ = 150擄C)
Reverse Breakdown Voltage
(IBR = 100
碌A(chǔ)dc)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50
鈩?
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500
鈩?
1. FR鈥?5 = 1.0
0.75
2. Alumina = 0.4
0.3
IR
鈥?/div>
鈥?/div>
鈥?/div>
V(BR)
VF
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
CD
VFR
trr
QS
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
715
855
1000
1250
2.0
1.75
6.0
45
pF
Vdc
ns
pC
75
1.0
50
30
鈥?/div>
Vdc
mV
碌A(chǔ)dc
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
BAS16LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
單二極管/整流器
-
標(biāo)準(zhǔn)
75V
200mA（DC）
1.25V @ 150mA
小信號 =
6ns
1µA @ 75V
2pF @ 0V，1MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
BAS16LT1OSCT
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