BAS16HT1
SURFACE MOUNT SWITCHING DIODE
Reverse Breakdown Voltage - 75 Volts
SOD-323
1
2
2
ANODE
Peak Forward Current - 200mA
0.106(2.70)
0.091(2.30)
0.071(1.80)
0.063(1.60)
1
2
1
CATHODE
0.016(0.40)
0.010(0.25)
0.053(1.35)
0.045(1.15)
0.006(0.150)
REF.
0.025(0.63)
0.033(0.83)
0.063(1.60)
0.112(2.85)
NOTE 3
0.007(0.18)
0.004(0.09)
NOTES:
0.004(0.10)
0.000(0.00)
0.039(1.00)
0.031(0.80)
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING.
Device Marking : BAS16HT1 = A6
*Dimensions in inches and (millimeters)
MAXIMUM RATINGS
Ratings at 25 C ambient temperature unless otherwise specified.
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
o
SYMBOLS
V
R
I
F
I
FSM
VALUE
75
200
500
UNITS
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
CHARACTERISTIC
Total Device Dissipation FR-5 Board, T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
o
o
SYMBOLS
P
D
R
JA
MAX.
200
1.57
635
150
UNITS
mW
o
mW / C
o
C/W
o
T
J
, T
STG
C
ELECTRICAL CHARACTERISTICS
( T
A
=25 C unless otherwise noted )
CHARACTERISTIC
( V
R
=75Vdc )
o
( V
R
=75Vdc, T
J
=150 C )
o
( V
R
=25Vdc, T
J
=150 C )
( I
BR
=100uAdc )
( I
F
=1.0mAdc )
( I
F
=10mAdc )
( I
F
=50mAdc )
( I
F
=150mAdc )
( V
R
=0, f=1.0MHz )
( I
F
=10mAdc, tr=20nS )
( I
F
=I
R=
10mAdc, RL=50
)
)
SYMBOLS
MIN.
-
-
-
75
-
-
-
-
-
-
-
-
MAX.
1.0
50
30
-
0.72
0.86
1.00
1.25
2.0
1.75
6.0
45
UNITS
Reverse Voltage Leakage Current
Reverse Breakdown Voltage
I
R
V
( BR )
uAdc
Vdc
Forward Voltage
V
F
Vdc
Junction Capacitance
Forward Recovery Voltage
Reverse Recovery Time
Stored Charge
C
J
V
FR
t
rr
Q
S
pF
Vdc
nS
pC
( I
F
=10mAdc, to V
R=5.0Vdc, RL=500
REV. : 0
Zowie Technology Corporation
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